| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 |
| filingDate |
2005-06-14^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-11-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01bf0cc1beddbd15f6e8de2f97993ea3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_223cc71f3c5b2a232747cde659b5810b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_369cdc5e485e02a2429f1a9bf85a367d |
| publicationDate |
2008-11-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7446381-B2 |
| titleOfInvention |
Semiconductor memory device and method for fabricating the same |
| abstract |
A semiconductor memory device has a memory region which is formed on a semiconductor substrate and in which a plurality of memory cells each including a memory transistor are arranged as a matrix using a plurality of impurity diffusion layers (bit lines) and a plurality of gate electrodes (word lines) intersecting each other. The gate electrode of each of the memory transistors has an upper surface thereof formed into a protruding portion which is higher in level at the middle portion than at the edge portions. A silicide layer is formed on the upper surface of the protruding portion of the gate electrode of each of the memory transistors. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010144108-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011024820-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011220985-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011084277-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7863135-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8350344-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349738-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8390048-B2 |
| priorityDate |
2004-07-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |