http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011084277-A1

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publicationDate 2011-04-14^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2011084277-A1
titleOfInvention Semiconductor memory device and its manufacturing method
abstract A semiconductor memory device has a plurality of word line provided on a semiconductor region, extending in a row direction, a plurality of bit lines provided in the semiconductor region, extending in a column direction, and a plurality of memory elements provided at intersections between the plurality of word lines and the plurality of bit lines. Each word line provides a first gate electrode in the corresponding memory element. A lower portion of a side surface of each word line in a direction parallel to an extending direction of the word line is perpendicular to a main surface of the semiconductor region. An upper portion of the side surface is inclined so that a width thereof becomes smaller toward a top thereof.
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