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filingDate 2010-02-04^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-08-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8247812-B2
titleOfInvention Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
abstract An object is to suppress deterioration in electric characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer, an impurity semiconductor layer is provided over the silicon layer, and a source electrode layer and a drain electrode layer are provided to be electrically connected to the impurity semiconductor layer.
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