| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60c5d9e8cbaba54d27436541f787a831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa803ac913c1b319ea53010a919d9a74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 |
| filingDate |
2011-12-06^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-11-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_778ce4f8a55478cd9103f9e94be2ead9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ff84957c3236e9fe50e5b6f04d3c272 |
| publicationDate |
2013-11-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8590484-B2 |
| titleOfInvention |
Semiconductor device manufacturing method and substrate processing apparatus |
| abstract |
Provided is a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10526700-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573535-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653357-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9053909-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11155920-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015020973-A1 |
| priorityDate |
2009-09-11^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |