http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8748063-B2

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-74
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-26
filingDate 2012-08-01^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-06-10^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b671369393e2eda34d91d2d3b43b1600
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publicationDate 2014-06-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8748063-B2
titleOfInvention Extreme ultraviolet (EUV) multilayer defect compensation and EUV masks
abstract Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104252098-B
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015117754-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10824080-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9261775-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104252098-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8953869-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9679372-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109031894-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020133141-A1
priorityDate 2012-08-01^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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