| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6db65ca74c1cc8c44aa9d26321609f76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9f254630f4a11ed66396b29333a85ba6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ab1b4679c7dcbbecb4cc4249310ae338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7d9e0b84725dd3199124e408ea28cf33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8db6c6b6b74873332bb3ebf81cbdddca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_509c1e52c3474b8ee1cddc32ae198634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28017 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2011-10-19^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99009374cc874cef0f7adcfa0d00f1bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0572858e8634c793a9d85384595540b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ce6c95488e0bae5e7b75ede9b7b976a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4b9b3459804fe65d07a0e4de0a41025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9207e658458cb0c133d75f51dc58dde8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6636a692f3be694357ea34e05724985f |
| publicationDate |
2014-07-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8772149-B2 |
| titleOfInvention |
FinFET structure and method to adjust threshold voltage in a FinFET structure |
| abstract |
FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476121-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094598-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015270400-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10446400-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666717-B2 |
| priorityDate |
2011-10-19^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |