| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9066b3c02faa0c2867b633893cf1be62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a3106500d39f48d5ca2c3aba1d053f79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48d16235715fa29de407f00412173fa1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B31-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-70 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B31-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 |
| filingDate |
2010-03-16^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-08-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f3e3dae168f616281486dd91be643ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_868ad20eb72c42b1a85901b8bda35123 |
| publicationDate |
2014-08-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8815708-B2 |
| titleOfInvention |
Method for improving the quality of a SiC crystal |
| abstract |
A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9640610-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10304939-B2 |
| priorityDate |
2006-07-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |