Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-72 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-22 |
filingDate |
2012-12-18^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-12-09^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9af241be73de4a49e84a1c88e1f34670 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fb901be8390e8964ab4c929aab1aa1c |
publicationDate |
2014-12-09^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8906582-B2 |
titleOfInvention |
Blank masks for extreme ultra violet lithography, methods of fabricating the same, and methods of correcting registration errors thereof |
abstract |
Blank masks for extreme ultraviolet (EUV) photolithography are provided. The blank mask includes a substrate having a first surface and a second surface which are opposite to each other, a reflection layer disposed on the first surface of the substrate to reflect extreme ultraviolet (EUV) rays, an absorption layer disposed on the reflection layer opposite to the substrate to absorb extreme ultraviolet (EUV) rays, and a conductive layer disposed on the second surface of the substrate to expose portions of the substrate. Related methods are also provided. |
priorityDate |
2012-07-30^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |