http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9057957-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-50 |
| filingDate | 2013-06-13^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-06-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e146de08af1ef4527cab6b3dc70b54d |
| publicationDate | 2015-06-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9057957-B2 |
| titleOfInvention | Extreme ultraviolet (EUV) radiation pellicle formation method |
| abstract | An extreme ultraviolet (EUV) photolithography pellicle with at least 70% transmissivity to EUV can be formed from a layer of semiconductor material applied to a substrate. The bottom surface of the layer can be exposed by forming support structure(s) from the substrate. Semiconductor material between the exposed surfaces can become the pellicle by anodizing until an objective is reached, such as a particular transmissivity, range of size of pores formed, pellicle region thickness, elapse of a period, and/or another objective indicative of 70% transmissivity to EUV for the semiconductor material between the exposed surfaces. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10241396-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I581072-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10386716-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9915867-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018003603-A1 |
| priorityDate | 2013-06-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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