| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8711ea5c1b04a5bcf6e0a9686beb6686 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236 |
| filingDate |
2014-01-08^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-07-07^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddcc3cd1252165f244aaed2203514f5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c3d704c5782e6ecd3eb4e4344559bc7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcbba2c53034b3f8dac7f4482c83344a |
| publicationDate |
2015-07-07^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9076903-B2 |
| titleOfInvention |
Forming high-efficiency silicon solar cells using density-graded anti-reflection surfaces |
| abstract |
A method ( 50 ) is provided for processing a graded-density AR silicon surface ( 14 ) to provide effective surface passivation. The method ( 50 ) includes positioning a substrate or wafer ( 12 ) with a silicon surface ( 14 ) in a reaction or processing chamber ( 42 ). The silicon surface ( 14 ) has been processed ( 52 ) to be an AR surface with a density gradient or region of black silicon. The method ( 50 ) continues with heating ( 54 ) the chamber ( 42 ) to a high temperature for both doping and surface passivation. The method ( 50 ) includes forming ( 58 ), with a dopant-containing precursor in contact with the silicon surface ( 14 ) of the substrate ( 12 ), an emitter junction ( 16 ) proximate to the silicon surface ( 14 ) by doping the substrate ( 12 ). The method ( 50 ) further includes, while the chamber is maintained at the high or raised temperature, forming ( 62 ) a passivation layer ( 19 ) on the graded-density silicon anti-reflection surface ( 14 ). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102017212442-A1 |
| priorityDate |
2010-06-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |