| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a3d52eacd83e723ebd2ca61b598586c2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2201-0638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2201-061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2201-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-8806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-9501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14698
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14632
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1461 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-88 |
| filingDate |
2015-03-10^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-08-09^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44fc59a1685dd38699d52762a3cc7e0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b4683c933531f1acdafc2565420f0a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af9bcd4fcca3d996b4d708a23c010a99 |
| publicationDate |
2016-08-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9410901-B2 |
| titleOfInvention |
Image sensor, an inspection system and a method of inspecting an article |
| abstract |
A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 10 13 cm −3 ). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021320144-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023206990-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818005-B2 |
| priorityDate |
2014-03-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |