Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
filingDate |
2015-12-09^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2016-09-06^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9077b08a8cf1e345b39793ea956a0c26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8ac2a5842aea96cd48c4f67bc65fd07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb9e5f1701e0d8f030fc230042b203df |
publicationDate |
2016-09-06^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9437714-B1 |
titleOfInvention |
Selective gate contact fill metallization |
abstract |
Gate metal is selectively deposited on work function material during formation of a replacement metal gate. The work function material is subjected to a hydrogen-based surface treatment to enable the subsequent selective deposition of the gate metal. Work function materials including titanium nitride and tantalum nitride may be processed to facilitate the selective deposition of gate metals, thereby simplifying the gate fabrication process by eliminating the need for subjecting the gate metal to a reactive ion etch or chemical mechanical planarization prior to formation of a dielectric cap. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020059911-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031500-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388532-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9722038-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019005099-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018197786-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10204828-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018145150-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380542-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10861958-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017077256-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109841563-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109841563-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018096852-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10283623-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573563-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957536-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11205590-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019035917-A1 |
priorityDate |
2015-12-09^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |