| abstract |
A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A semiconductor device including the transistor is provided. A miniaturized semiconductor device includes an oxide semiconductor, the first conductor, the second conductor, the third conductor, the first insulator, and the second insulator. The first conductor is embedded in a region between the second conductor and the third conductor with the first insulator positioned between the first conductor and the region. |