| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0819
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2320-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3659 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3659 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-3233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
| filingDate |
2018-11-29^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00493c8d5b956f1a1dbffaf60e57a6c7 |
| publicationDate |
2021-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-RE48576-E |
| titleOfInvention |
Semiconductor device and driving method thereof |
| abstract |
To reduce adverse effect of variations in threshold voltage. A semiconductor device includes a transistor including a gate connected to one electrode of a capacitor and one terminal of a SW1, a source and a drain one of which is connected to one terminal of a SW2 and one terminal of a SW3 and the other of which is connected to the other terminal of the SW1 and one terminal of a SW4; a first wiring electrically connected to the other terminal of the SW2; a second wiring electrically connected to the other terminal of the SW4; a load including electrodes one of which is connected to one electrode of the capacitor and the other terminal of the SW3; and a third wiring connected to the other electrode of the load. |
| priorityDate |
2011-06-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |