| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a7e7b77c57e3c917f9db819d791f3491 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24917
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T279-23 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02N13-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 |
| filingDate |
2003-04-30^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_541577207b426239bacabbf392451569
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e951546dfe7f4a82788b94f8538f5e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_486bc4605998f9ca143a127f964c9b12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3d9232d8f119e4f1a15bd90c070d1b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a04706ac71cd2d6b8bfa3cc8497525b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e438710edb72cbb4b0646b347f73151e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bf63a1ffe84e7742f70c1d5e7d856fb |
| publicationDate |
2003-11-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03094335-A1 |
| titleOfInvention |
Improved platen for electrostatic wafer clamping apparatus |
| abstract |
A platen (12) for electrostatic wafer clamping apparatus (10) is disclosed and has comprising a platen body (12) of dielectric material and grains of electrically conductive material diffused in the dielectric material so that the platen (12) has a relatively large electrostatic capacitance due to the diffusion of the conductive grains. This result in the platen (12) having an increased clamping force regardless of humidity. In accordance with another aspect of the invention, the thickness of the platen body (12) can be decreased by an amount sufficient to maintain a constant clamping force with reduced applied voltage from source (28), to eliminate any residual voltage on the platen and to increase the speed of wafer (38) release. |
| priorityDate |
2002-05-01^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |