http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5691876-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6833
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23Q3-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02N13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
filingDate 1995-01-31^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1997-11-25^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7122abb95549a083f10e8b62b65d05b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43c328824d4c28ef8991238f7846653b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99fae2191455b93e72decc602fd70916
publicationDate 1997-11-25^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5691876-A
titleOfInvention High temperature polyimide electrostatic chuck
abstract In accordance with the present invention, two types of polymeric dielectric systems useful in construction of a high-temperature electrostatic chuck are disclosed. Further, a high temperature power connection for transmitting power from a supply source to a conductive extension from the electrostatic chuck conductive layer is described. The first polymeric dielectric system provides for the use of polyimide films which do not require an adhesive to adhere to an underlying substrate support platen. The self-adhering polyimide film comprises from one to three layers of polyimide material, wherein at least one outer layer of polyimide material is thermoplastic in nature, for the purpose of adhesion and/or encapsulation. When the film comprises two layers, one of the layers is a non-thermoplastic polyimide having an increased glass transition temperature of about 350° C. or greater. When the film comprises three layers, typically the center layer is the non-thermoplastic polyimide, with the upper and lower layers being a thermoplastic polyimide. The thermoplastic polyimide is placed in contact with a substrate to which it is to bond (such as the surface of a conductive platen used to support a semiconductor workpiece) and heat and pressure are applied to cause the thermoplastic polyimide to flow and bond to the substrate. The second polymeric dielectric system provides for the use of a liquid polyamic acid or modified polyimide precursor which is cured in place against a substrate to provide a polyimide-comprising film adhered to the substrate. Depending on the composition of the polyamic acid or modified polyimide precursor, various degrees of crystallinity can be achieved in the cured, solid polyimide.
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