| abstract |
The present invention provides a memory device which has a memory element having a simple structure in which a composition layer is sandwiched between a pair of conductive layers. With this characteristic, a memory device which is involatile, easily manufactured, and additionally recordable can be provided. A memory device of the present invention has plural memory cells, plural bit lines extending in a first direction, and plural word lines extending in a second direction which is perpendicular to the first direction. Each of the plural memory cells has a memory element. The memory element comprises a first conductive layer forming the bit line, a second conductive layer forming the word line, and a composition layer to be hardened by an optical action. The composition layer is formed between a first conductive layer and a second conductive layer. |