| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_79df76a6a4dc6a2a3d3bdb35c1eb9615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_690c1401dd7f8024b78037db10f887e3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-23 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 |
| filingDate |
2011-06-10^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-09-17^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d897f478cef09296b3439a9adc312f3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd44b22573959481c69dbeb1e7d32396 |
| publicationDate |
2013-09-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8536067-B2 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
A memory element is formed by providing an organic compound between a pair of upper and lower electrodes. However, when the electrode is formed over a layer containing an organic compound, a temperature is limited because the layer containing the organic compound can be influenced depending on a temperature for forming the electrode. A forming method for the electrode is limited due to this limitation of a temperature. Therefore, there are problems that an expected electrode cannot be formed, and miniaturization of an element is inhibited. A semiconductor device includes a memory element and a switching element which are provided over a substrate having an insulating surface. The memory element includes first and second electrodes, and a layer containing an organic compound, which are provided on the same plane. A current flows from the first electrode to the second electrode. The first electrode is electrically connected to the switching element. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553726-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004983-B2 |
| priorityDate |
2005-08-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |