| abstract |
Provided is a plasma treatment device comprising: a treatment chamber wherein a wafer 1 is treated using plasma; a high-frequency power source which supplies high-frequency electricity for generating the plasma; a sample stage 2 which is positioned in the treatment chamber and whereon the wafer 1 is mounted; and a DC power source 106 which is electrically connected to the sample stage 2 and which causes the sample stage 2 to generate an adsorptive power. The sample stage 2 comprises: a protrusion part 201a which adsorbs the wafer 1 by the adsorptive power; and a step part 201b which protrudes from the protrusion part 201a at the lower part of the protrusion part 201a. A ring 5, which can abut the lower surface of the wafer 1, is disposed on the outer side of the protrusion part 201a. When the wafer 1 is adsorbed on the upper surface of the protrusion part 201a of the sample stage 2, a space 7 defined by the wafer 1, the protrusion part 201a, and the ring 5 is sealed. |