| abstract |
PROBLEM TO BE SOLVED: To provide an etching solution for removing a molybdenum residue with a copper molybdenum film and an etching method therefor. A copper single film or a copper molybdenum containing a first additive, a second additive, a fluorine compound and deionized water containing hydrogen peroxide, an organic acid, a phosphate (Phosphate) and nitrogen (N) An etching solution for the film is provided. Specifically, 5% to 30% hydrogen peroxide, 0.5% to 5% organic acid, 0.2% to 5% phosphate, 0.2% by weight based on the total weight of the composition. Etching solution of a copper single film or a copper molybdenum film containing a first additive and a second additive containing 5 to 5% by weight of nitrogen (N), 0.01% to 1.0% by weight of a fluorine compound and deionized water, and An etching method is provided. [Selection] Figure 1A |