http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009518852-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
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filingDate 2006-12-08^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2009-05-07^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009518852-A
titleOfInvention Polishing selectivity adjusting auxiliary agent and CMP slurry containing the same
abstract The present invention relates to a polishing selectivity adjusting auxiliary used when simultaneously polishing a positively charged substance and a negatively charged substance, and a CMP slurry containing the polishing selectivity adjusting auxiliary. The polishing selectivity adjusting auxiliary agent includes: a) a polymer electrolyte that adsorbs to a positively charged substance to increase the polishing selectivity for a negatively charged substance, b) a basic substance, and c) a fluorine compound. including. If the polishing selectivity adjusting auxiliary according to the present invention is used in the CMP slurry, the polishing selectivity of the silicon oxide film with respect to the silicon nitride film is increased, the particle size in the CMP slurry is made uniform, and the viscosity change due to external force is stabilized. In addition, minimization of micro scratches generated during polishing can be achieved, thereby improving reliability and productivity in an ultra-high integrated semiconductor manufacturing process that requires a fine pattern.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017043139-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017043139-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020537701-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013102090-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017019893-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7096884-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016529356-A
priorityDate 2005-12-08^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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