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publicationDate 1999-06-29^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5916634-A
titleOfInvention Chemical vapor deposition of W-Si-N and W-B-N
abstract A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF6, either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications.
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