| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-92 |
| filingDate |
2001-04-30^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-06-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a15a59819d487774e65e5f81f9c9c539
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63e61b2760b387a22fed8ed09e949728
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fd41dc3ca2fa9e8c59026f872f1b808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e312d8aaf25e3b068cb9d0230a6185ae |
| publicationDate |
2002-06-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6400552-B2 |
| titleOfInvention |
Capacitor with conductively doped Si-Ge alloy electrode |
| abstract |
Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor includes a capacitor dielectric layer including Ta 2 O 5 formed over a first capacitor electrode. A second capacitor electrode is formed over the Ta 2 O 5 capacitor dielectric layer. Preferably, at least a portion of the second capacitor electrode is formed over and in contact with the Ta 2 O 5 in an oxygen containing environment at a temperature of at least about 175° C. Chemical vapor deposition is one example forming method. The preferred second capacitor electrode includes a conductive metal oxide. A more preferred second capacitor electrode includes a conductive silicon including layer, over a conductive titanium including layer, over a conductive metal oxide layer. A preferred first capacitor electrode includes a conductively doped Si—Ge alloy. Preferably, a Si 3 N 4 layer is formed over the first capacitor electrode. DRAM cells and methods of forming DRAM cells are disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627501-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8951903-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7205192-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8921914-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6744092-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6495428-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8501563-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003001186-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8110469-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7670646-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004195613-A1 |
| priorityDate |
1998-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |