patent/US-6051482-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6051482-A

Outgoing Links

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assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ddbd9538efce6e134d471b912946264e
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7838
classificationIPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
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filingDate	1998-02-17^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2000-04-18^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_044820e0a19421e7ca96c7c6d95c3d55
publicationDate	2000-04-18^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-6051482-A
titleOfInvention	Method for manufacturing buried-channel PMOS
abstract	A method for manufacturing a buried-channel pMOSFET device that utilizes a plasma doping technique to form a very shallow P-type channel layer on the top surface of a sub-micron buried-channel pMOSFET. The buried-channel pMOSFET device formed by the method has a higher current drivability and a higher anti-punchthrough resistance.
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type	http://data.epo.org/linked-data/def/patent/Publication

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