| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
2000-03-10^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-11-05^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cdd139ea6e212b050c54fc6f2246ed9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19a9ecc29c8c924f899dc5007c243459
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_616aa5b9010e798a9978f9d86e183b53 |
| publicationDate |
2002-11-05^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6475706-B1 |
| titleOfInvention |
Pattern formation method |
| abstract |
A resist film is formed by applying, on a semiconductor substrate, a resist material containing a base polymer including polystyrene in which hydroxyl groups are substituted for hydrogen atoms at two or more portions of a benzene ring. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band through a mask for pattern exposure, and the resist film is developed after the pattern exposure, thereby forming a resist pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11640113-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6709799-B2 |
| priorityDate |
1999-03-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |